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Invent Deposition #2540 · © 2017 Christopher Gabriel Brown
Long before it became New Path Heights – Proof of Function 4: Electron Mobility Advantage Over Silicon , this idea was written down and copyrighted in 2017 as Invent Deposition #2540 :
“Under and over layered blanks copyright (c) 2017 chris gabriel brown for writing purpose and laying the path to write the functions with software innate.”— © 2017 Christopher Gabriel Brown
Original 2017 entry preserved in the Internet Archive snapshots of buyinvent.com .
It has since graduated from a one-line idea into an engineered product.
→ See where it graduated: New Path Heights – Proof of Function 4: Electron Mobility Advantage Over Silicon
Provenance: published 2017 in the Invent Depositions collection; part of an intellectual-property portfolio with U.S. patent applications dating to 2012; independently timestamped by the Internet Archive. First to market — documented public offering, not a determination of patent priority.
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chris. "The Origin of New Path Heights – Proof of Function 4: Electron Mobility Advantage Over Silicon — 2017 Invent Deposition #2540." LCUS, June 13, 2026. https://cri-one.com/blog/2026/06/13/the-origin-of-new-path-heights-proof-of-function-4-electron-mobility-advantage-over-silicon-2017-invent-deposition-2540/
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APA
chris. (2026). The Origin of New Path Heights – Proof of Function 4: Electron Mobility Advantage Over Silicon — 2017 Invent Deposition #2540. LCUS. https://cri-one.com/blog/2026/06/13/the-origin-of-new-path-heights-proof-of-function-4-electron-mobility-advantage-over-silicon-2017-invent-deposition-2540/
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MLA
chris. "The Origin of New Path Heights – Proof of Function 4: Electron Mobility Advantage Over Silicon — 2017 Invent Deposition #2540." LCUS, June 13, 2026, https://cri-one.com/blog/2026/06/13/the-origin-of-new-path-heights-proof-of-function-4-electron-mobility-advantage-over-silicon-2017-invent-deposition-2540/.
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