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Invent Deposition #2624 · © 2017 Christopher Gabriel Brown
Long before it became New Path Heights – Proof of Function 2: AES Semiconductor Material Properties , this idea was written down and copyrighted in 2017 as Invent Deposition #2624 :
“Safety issues and control of pathway control properties legal trade and international processing as shipping on a drone front needs all the fixes that any other delivery path would acquire with permission a new travel rout with drone preferences functions of an everyday operating shipping company with information technicians and software writers an all other needs.”— © 2017 Christopher Gabriel Brown
Original 2017 entry preserved in the Internet Archive snapshots of buyinvent.com .
It has since graduated from a one-line idea into an engineered product.
→ See where it graduated: New Path Heights – Proof of Function 2: AES Semiconductor Material Properties
Provenance: published 2017 in the Invent Depositions collection; part of an intellectual-property portfolio with U.S. patent applications dating to 2012; independently timestamped by the Internet Archive. First to market — documented public offering, not a determination of patent priority.
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Cri-One aka Chris Brown. "The Origin of New Path Heights – Proof of Function 2: AES Semiconductor Material Properties — 2017 Invent Deposition #2624." LCUS, June 13, 2026. https://cri-one.com/blog/2026/06/13/the-origin-of-new-path-heights-proof-of-function-2-aes-semiconductor-material-properties-2017-invent-deposition-2624/
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APA
Cri-One aka Chris Brown. (2026). The Origin of New Path Heights – Proof of Function 2: AES Semiconductor Material Properties — 2017 Invent Deposition #2624. LCUS. https://cri-one.com/blog/2026/06/13/the-origin-of-new-path-heights-proof-of-function-2-aes-semiconductor-material-properties-2017-invent-deposition-2624/
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MLA
Cri-One aka Chris Brown. "The Origin of New Path Heights – Proof of Function 2: AES Semiconductor Material Properties — 2017 Invent Deposition #2624." LCUS, June 13, 2026, https://cri-one.com/blog/2026/06/13/the-origin-of-new-path-heights-proof-of-function-2-aes-semiconductor-material-properties-2017-invent-deposition-2624/.
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