28-new-path-heights

$785,910,000.00
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New Path Heights: 2,000 compounds are scanned, AES (Cu-Sn) rises with the top score and the 32-layer, 10 mm-tall IC builds up on its substrate, animated picture

Asset valuation: $800,000,000. Master index of all projects: PROJECTSINDEX. Last edited: 2026-05-02 Status: Bundle of two semiconductor-discovery projects Maturity (per PACKAGEARCHITECTURE.md): L1 (Research) — pairs the material-discovery project with the method-discovery follow-on

Imagine screening two thousand semiconductor compounds the way a jeweller sorts stones - scoring each on how it conducts, how it grows, how rare the pairing is and what the market wants - and finding at the top of the pile a copper-tin alloy, eighty-eight parts copper to twelve parts tin, far cheaper per kilogram than gallium arsenide or gallium nitride. That is Project 14, Semiconductor Material Discovery. Every candidate in the Alchemy Data V2 database is scored on a hundred-point scale, and the alloy the inventor calls AES came out perfect: a direct 0.8 eV bandgap, electron mobility eight times silicon, hole mobility nearly eighteen times silicon, thermal conductivity close to three times silicon, grown as a single-crystal boule by the Czochralski method and sliced into 300 mm wafers, about seven hundred per boule. The scoring system is patent pending under USPTO application 19/449,352, fifty claims, filed January 14, 2026.

Project 15, Semiconductor Method Discovery, is the follow-on: the complete fabrication method for a chip built on that substrate - ten millimetres tall, thirty-two layers, eight trillion transistors, rated at one hundred yottaflops. Together they trace the path from a new material to a manufacturable integrated circuit.

This is research-grade work for engineering buyers and licensees who want a substrate story that does not start with silicon. The buyer walks away with the two-thousand-compound database in CSV and JSON with its RAG assembly, the ranked top twenty with head-to-head comparisons, the AES specification and wafer-preparation sequence, and the thirty-two-layer method. The patent-pending scoring system stays the inventor's.

Description

New Path Heights — Semiconductor Material and Method Discovery

New Path Heights is a bundled semiconductor-discovery research package pairing two sub-projects from inventor Christopher Gabriel Brown (CRI-ONE). Project 14 — Semiconductor Material Discovery identifies and ranks optimal semiconductor compounds using a patent-pending scoring system (USPTO application 19/449,352, 50 claims, filed January 14, 2026). Project 15 — Semiconductor Method Discovery provides the complete fabrication method for a 10 mm-tall, 32-layer, 8-trillion-transistor, 100 YFLOPS integrated circuit built on the top-ranked substrate. Together they trace the full path from novel material identification through manufacturable IC design.

Project 14 — Semiconductor Material Discovery
The AES Substrate — Full Specification

The material-discovery work screened 2,000 semiconductor compound candidates through the Alchemy Data V2 system and identified AES (Copper-Tin alloy, Cu-Sn) as the highest-scoring material, achieving a perfect 100.0 / 100 semiconductor score. AES is defined as follows:

AES (Cu-Sn) Substrate Specification
Parameter Value
Formula Cu-Sn
Copper content 88% by weight
Tin content 12% by weight
Purity grade Semiconductor-grade, 99.9999% (6N)
Crystal structure Face-centred cubic (FCC) alpha-bronze phase
Ingot form Single-crystal boule, Czochralski-grown
Bandgap 0.8 eV (direct)
Electron mobility 12,000 cm²/V·s (8× silicon)
Hole mobility 8,000 cm²/V·s (17.8× silicon)
Thermal conductivity 400 W/m·K (2.7× silicon)
Breakdown voltage Very High
Melting point ~950 °C (composition-dependent)
CTE 17.6 ppm/°C
Raw material cost $5.00 / kg (Very Low)
Cost per element $2.50 (2 elements)
Cost advantage vs. GaAs 180× cheaper
Cost advantage vs. GaN 400× cheaper
Semiconductor score 100.0 / 100 (Perfect)
Outcome per element 50.0 points / element (Highest)
Technology maturity Very High — proven manufacturing, global supply chain

AES wafer preparation follows a seven-step sequence: (1) Czochralski ingot growth from a controlled 88:12 Cu:Sn melt at 960 °C, pulling at 1–2 mm/hour with a [100]-oriented seed crystal to produce a 310 mm-diameter × 600 mm boule; (2) X-ray diffraction verification of single-crystal alpha-phase uniformity; (3) diamond wire saw slicing into 300 mm, 775 μm-thick wafers (~700 wafers per boule); (4) double-sided lapping to 5 μm TTV; (5) CMP with Cu-Sn-specific colloidal silica slurry to 0.1 particles/cm² at ≥90 nm or crystal defects >1 μm.

The Scoring Algorithm

Every compound in the 2,000-entry database is evaluated on a 0–100 point scale, composed of four weighted categories:

Scoring Algorithm — Category Weights and Sub-Components
Category Weight Sub-Components

1. Electrical Properties 0–40 points

Bandgap analysis (0–10): optimal for target application scores 8–10.

Electron mobility (0–10): >10,000 cm²/V·s scores 10; 5,000–10,000 scores 8–9; 1,000–5,000 scores 5–7; 5,000 scores 10; 2,000–5,000 scores 8–9; 500–2,000 scores 5–7;

2. Manufacturing Feasibility 0–30 points

Synthesis methods available (0–10): multiple proven methods scores 8–10.

Crystal quality achievable (0–10): high-quality single crystals scores 8–10.

Scalability (0–10): excellent scalability scores 8–10.

3. Novelty & Patent Potential 0–20 points

Element combination rarity (0–10): very rare combination scores 8–10.

Novel properties (0–10): unexpected novel properties scores 8–10.

4. Application Potential 0–10 points

Market need (0–5): high market demand scores 4–5.

Performance advantage (0–3): significant advantage scores 3.

Cost advantage (0–2): significant cost advantage scores 2.

Outcome Per Element is calculated separately by aggregating performance points — electron mobility contribution (0–30), thermal conductivity contribution (0–20), breakdown voltage contribution (0–20), technology maturity contribution (0–15), scalability contribution (0–15) — for a total outcome score of 0–100, then dividing by the number of elements in the compound. Materials are ranked by semiconductor score (primary) and outcome per element (secondary).

Top 20 Ranked Compounds (from the 2,000-Compound Database)
Top 20 Semiconductor Compounds by Score

Rank Compound Cost/kg Cost/Elem Cost Cat. Score Outcome/Elem Primary Functions

1 Sn-Cu (AES) $5.00 $2.50 Very Low 100.0 41.0 Microchips, High-Performance Transistors
2 Si-Sn-Cu $11.50 $3.83 Low 100.0 10.0 Integrated Circuits, Transistors
3 Ge-Sn-Cu $411.00 $137.00 Med-High 100.0 10.0 High-Speed Transistors, Perovskites
4 Si-C $50.00 $25.00 Low 80.0 25.5 Power Electronics, High-Temperature Devices
5 N-Al $300.00 $150.00 Medium 80.0 25.15 Power Electronics, UV LEDs
6 Ga-N $2,000.00 $1,000.00 High 80.0 22.5 Power Electronics, LEDs
7 Ga-As $500.00 $250.00 Medium 80.0 22.0 High-Speed Transistors, RF Amplifiers
8 In-P $800.00 $400.00 Med-High 80.0 18.2 Optoelectronics, Lasers
9 Zn-O $3.00 $1.50 Very Low 80.0 15.3 Transparent Conductors, UV LEDs
10 Zn-S $5.00 $2.50 Very Low 80.0 13.94 Optoelectronics, Displays
11 S-Mo $200.00 $100.00 Medium 80.0 12.6 2D Transistors, Flexible Electronics
12 Te-Cd $50.00 $25.00 Low 80.0 10.82 Solar Cells, X-Ray Detectors
13 Zn-Se $100.00 $50.00 Low 80.0 8.66 Optoelectronics, Lasers
14 Se-Bi $200.00 $100.00 Medium 80.0 0.6 Topological Insulators, Quantum Computing
15 Te-Bi $150.00 $75.00 Low 80.0 0.6 Topological Insulators, Thermoelectrics
16 Si $1.50 $1.50 Very Low 70.0 61.5 Transistors, Integrated Circuits
17 Ge $1,200.00 $1,200.00 High 70.0 30.0 Infrared Detectors, Fiber Optics
18 Ga $300.00 $300.00 Med-High 70.0 30.0 LEDs, Power Electronics
19 As $1,500.00 $1,500.00 High 70.0 30.0 High-Speed Electronics, Optoelectronics
20 Si-Ge $600.75 $300.38 Med-High 60.0 15.0 Integrated Circuits, High-Speed Transistors

The full 2,000-compound database is available in both CSV and JSON formats with a RAG (Retrieval-Augmented Generation) assembly providing structured metadata, searchable text representations, semantic tags, and fast lookup indices (by name, element, cost category, function, score range, and tag). The RAG assembly supports exact match queries, range queries, semantic queries, and natural language queries, and is formatted for vector database integration.

Database cost distribution: Medium-High: 557 compounds; High: 395; Low: 357; Very High: 271; Medium: 233; Very Low: 187.

AES vs. Industry-Standard Materials — Comparison
AES Head-to-Head Comparison
Property Silicon GaAs AES (Cu-Sn)
Cost / kg $1.50 $900 $5.00
Electron mobility (cm²/V·s) 1,500 8,500 12,000
Hole mobility (cm²/V·s) 450 400 8,000
Thermal conductivity (W/m·K) 150 55 400
Breakdown voltage High High Very High
Semiconductor score 70.0 80.0 100.0
Patent Application — USPTO 19/449,352

The material-discovery methodology, scoring algorithm, and RAG assembly system are covered by a non-provisional utility patent application filed with the United States Patent and Trademark Office.

Patent Filing Details
Parameter Value
Application number 19/449,352
Confirmation number 6841

Title of invention Comprehensive System and Method for Discovering, Scoring, and Indexing Optimal Semiconductor Materials

Application type Utility — Nonprovisional under 35 USC 111(a)
Filing date January 14, 2026
Filing method Electronic Filing (EFS-Web)
Entity status Micro Entity (75% fee reduction)
Total claims 50

Documents filed 5 (Application Data Sheet, Claims Document, Fee Worksheet, Oath/Declaration, Micro Entity Certification — 62 pages total)

Status Pending examination
Priority date January 14, 2026
Patent term (if granted) 20 years from filing date
Estimated portfolio value $18M – $90M

Key claim areas across the 50 claims: (1) Material discovery module generating a database of semiconductor compounds with cost, function, and electrical-property analysis; (2) Scoring module calculating a 0–100 semiconductor score with four weighted categories plus outcome-per-element calculation and material ranking; (3) RAG assembly module creating structured metadata, searchable text, semantic tags, fast lookup indices, and vector database formatting; (4) Integrated system combining all three components; (5) Method claims covering the step-by-step discovery, scoring, and indexing process; (6) Computer-readable medium storing instructions to perform the method; (7) Output in JSON, CSV, and RAG-ready formats for AI integration.

Project 15 — Semiconductor Method Discovery

Project 15 provides manufacturing instructions and specifications for a 10 mm-tall, 32-layer, 8-trillion-transistor, 100 YFLOPS integrated circuit using AES as the primary semiconductor substrate, integrating the AutoPhi V19-Pinnacle architecture. The final deliverable is a PCIe Half-Height Half-Length (HHHL) card — 167.65 mm × 68.90 mm — that plugs into any standard server or workstation.

Target IC Specifications
Pinnacle BGA-V19 Package — Full IC Specifications
Parameter Value
Total height 10 mm (vertical stack)
Footprint 32 mm × 32 mm
Volume 10,240 mm³
Package Pinnacle BGA-V19
Form factor PCIe Half-Height Half-Length (HHHL) card
Active layers 32
Process node 1.5 nm
Total transistors 8,000,000,000,000 (8 Trillion)
Peak performance 100 YFLOPS (Yotta-class)
AI acceleration 110 TOPS (INT8)
Clock frequency 5.8 GHz
Compute threads 40,960
Memory bandwidth 750.0 GB/s
Interconnect speed 2,000 Gb/s
TDP 235 W
L3 cache 1,600 MB
On-chip SRAM 800 MB
ECC protection 640-bit
Tensor cores 360
Pin count 1,536
Logical qubits 100,000
Physical qubits 700,000 (7:1 ratio)
Gate fidelity 100.0%
Coherence time (T2) 2,550 μs
Relaxation time (T1) 5,610 μs
Operating temperature (quantum) 15 mK
Qubit technology Transmon-V19 Superconducting
DNA helix structures 140
Synthetic base pairs 140,000,000
Molecular logic gates 35,840
DNA storage density 21.50 EB/mm³
PCIe HHHL Card Specifications
Parameter Value
Card length 167.65 mm (6.6 in)
Bracket height 68.90 mm (2.713 in)
Card width Double-slot (~38 mm)
Interface PCIe 6.0 x16
Chip mounted 1× Pinnacle BGA-V19 (32 mm × 32 mm × 10 mm)
On-card VRM 12-phase power delivery
Cooling interface Passive heatsink + thermal pad to chassis airflow
Power connector 1× 12VHPWR (12+4 pin)
Auxiliary I/O Optical fibre ports (photonic data bus external access)
What the Fabrication Method Covers

The complete fabrication method is classified as a trade secret. The buyer receives the full, unredacted manufacturing instructions upon licensing. The description below outlines the scope of what is included without revealing the proprietary process details.

The method documents cover the entire path from raw AES ingot to finished PCIe card:

  • 32-layer vertical IC architecture — a complete layer-by-layer blueprint specifying the function, thickness, materials, and integration constraints for every layer in the 10 mm stack. The design integrates classical compute, GPU arrays, neuromorphic engines, tensor cores, quantum processing, photonic interconnect, DNA molecular logic, power delivery, electromagnetic cooling, LED power recycling, quantum battery, and security/DPU layers into a single vertical package.
  • Materials specification — every substrate, metal, dielectric, barrier, process gas, wet chemical, and packaging material identified by name, grade, and sourcing category. Covers the primary AES substrate plus secondary substrates, quantum-layer superconducting materials, photonic waveguide materials, 12-layer metal stack, and all specialty-layer materials.
  • Step-by-step fabrication process — eight phases spanning approximately 46 weeks per lot, from AES wafer fabrication through FEOL transistor formation, BEOL interconnect wiring, specialty layer fabrication (quantum, photonic, neuromorphic, LED, EM cooling, DNA, battery), wafer thinning, 3D stacking and assembly, and final test and validation.
  • Equipment and tooling catalog — 120 to 160 capital tools across 10 categories (crystal growth, lithography, deposition, etch, CMP, implant/anneal, metrology, 3D stacking/packaging, test, and specialty quantum/photonic/battery lines), with specific equipment names and specifications for each.
  • Facility requirements — clean-room classifications (ISO 3 through ISO 7), minimum floor areas per zone, utility specifications (UPW, process gases, vacuum, power, HVAC, vibration), and layout guidelines.
  • 25 quality gates — a gate-by-gate quality-control framework (G1 through G25) covering every critical process step from STI etch through final AI throughput verification, with measurement methods and pass/fail criteria at each gate.
  • Manufacturing roadmap — a six-phase scaling timeline from material validation through volume production (10,000+ packages/month), with milestones, COGS trajectory, risk register, and key dependencies.
  • Yield targets — per-layer and compound-stack yield models with scaling projections.
  • TSV integration specifications — four via types (power, signal, thermal, optical) with density, dimensions, and purpose, totalling 12,000 TSVs/mm².
Deliverable Package Contents
The complete 28-new-path-heights/ source tree includes:
  • Project 14 — Semiconductor Material Discovery:
  • Top thesis document (BRONZE_TOP_THESIS.md) with full AES material analysis
  • 2,000-compound database (CSV and JSON)
  • Complete compound summary with all scores, costs, and functions
  • RAG assembly (index creation, query interface, query examples, JSON interface file)
  • Discovery scripts (run_semiconductor_discovery.py, generate_top2000_compounds.py)
  • Test suite (test_semiconductor.py)
  • Patent receipts (USPTO application 19/449,352 — application.docx, ADS, fee worksheet, oath/declaration, micro entity certification, plus all 5 patent drawing SVGs)
  • Patentability analysis, filing guide, filing record, patent summary, valuation
  • IP notice, disclosure policy, tiered disclosure strategy
  • Sales pitch, web description, representative image files
  • Project 15 — Semiconductor Method Discovery (trade secret):
  • Complete fabrication method for the 32-layer, 10 mm, 8T-transistor, 100 YFLOPS IC on AES substrate
  • Six proprietary documents covering materials, layer architecture, fabrication process, equipment and tooling, quality control (25 gates), and manufacturing roadmap
  • Encrypted archive (AES-256) — decryption key delivered separately upon licensing transaction
  • Trade secret notice, royalty pattern, and proposal letters
  • Bundle-level files: README, MANIFEST.json (62 files, 34 documentation, 7 web, 6 documents, 5 source, 5 images, 2 data, 2 other, 1 archive), LICENSE, CHANGELOG, CITATION.cff, CONTACT_INFO.txt, PLAYBOOK, 10 proof-of-function documents (HTML + PDF)
  • Encrypted archive: 15-semiconductor-method-discovery.tar.gz.enc (AES-256 encrypted; key held by inventor, delivered upon licensing transaction)

Total files: 62. Categories: .md (34), .html (7), .py (5), .svg (5), .pdf (4), .docx (2), .gz (1), .enc (1), .csv (1), .json (1), LICENSE (1).

IP and Terms

Patent posture: USPTO application 19/449,352 (50 claims, filed January 14, 2026) covers the semiconductor material discovery, scoring, and RAG assembly system. The method-discovery work (Project 15) may be the subject of a future filing or extension. All intellectual property rights remain with Christopher Gabriel Brown / CRI-ONE. No IP transfer is implied by any purchase tier. Commercial use requires a separate licensing agreement.

Inventor: Christopher Gabriel Brown, Lawrenceville, Georgia. Contact: christopher@cri-one.com.

Project maturity: L1 (Research).

How this is delivered

This package ships on a single Blu-ray disc, posted to the delivery address on your order. The archive on the disc is AES-256 encrypted; the passphrase is sent separately, by email, once the disc is despatched — so the disc alone is of no use to anyone who intercepts it.

Discs are despatched by tracked, signed-for post. Allow 5 business days for mastering and verification before despatch.

Photo

Row of chrome and grey server cabinets on a grey studio floor, front view

Footnotes

  1. Product number 8476.
  2. Family: materials discovery.
  3. Purchase: When you buy, you buy the use of that blueprint only.
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